bta25 bw bta25 cw ? november 1998 ed : 2a snubberless tm triacs symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) tc= 85 c25 a i tsm non repetitive surge peak on-state current (t j initial = 25 c) tp = 8.3 ms 260 a tp = 10 ms 250 i 2 ti 2 t value for fusing tp = 10 ms 312 a 2 s di/dt critical rate of rise of on-state current i g = 500 ma di g /dt = 1 a/ m s. repetitive f = 50 hz 20 a/ m s non repetitive 100 t stg t j storage and operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s 260 c absolute ratings (limiting values) i t(rms) = 25a high commutation: (di/dt)c 12a/ms bta25-xxxcw (di/dt)c 22a/ms bta25-xxxbw insulating voltage 2500v (rms) features symbol parameter bta25-xxxbw/cw unit v drm v rrm repetitive peak off-state voltage t j = 125 c 600 800 v the bta25-xxxbw/cw series use a high performance mesa glass technology. the snubberless concept offers suppression of rc network and it is suitable for application such as water heaters, motor control, welding equipment, ... description rd91 (plastic) 1/5
p g (av) =1w p gm = 10 w (tp = 20 m s) i gm = 4 a (tp = 20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-c) junction to case for dc 1.7 c/w rth(j-c) junction to case for ac 360 conduction angle (f=50hz) 1.3 c/w thermal resistances symbol test conditions quadrant sensitivity unit cw bw i gt v d =12v (dc) r l =33 w tj= 25 c i-ii-iii min 4 5 ma max 35 50 v gt v d =12v (dc) r l =33 w tj= 25 c i-ii-iii max 1.3 v i h *i t = 250 ma gate open tj= 25 c max 50 70 ma i l i g = 1.2 i gt tj= 25 c i-iii max 50 70 ma ii max 60 80 v tm * i tm = 35a tp= 380 m s tj= 25 c max 1.5 v i drm i rrm v d =v drm v r =v rrm tj= 25 c max 5 m a tj= 125 c max 3 ma dv/dt * vd=67%v drm gate open tj= 125 c min 750 1000 v/ m s (di/dt)c * without snubber tj= 125 c min 12 22 a/ms * for either polarity of electrode a 2 voltage with reference to electrode a 1 electrical characteristics ordering information bta 25 - 800 b w insulated triac current 3 quadrant voltage sensitivity BTA25BW / bta25cw 2/5
a =30 0 5 10 15 20 25 0 5 10 15 20 25 30 it(rms)(a) p(w) 180 a a a =60 a =90 a = 120 a = 180 fig.1 : maximum power dissipation versus rms on-state current. 0 25 50 75 100 125 0 5 10 15 20 25 30 tcase( c) it(rms)(a) a =180 fig.3 : rms on-state currentversus case tempera- ture. -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 tj( c) igt,ih [tj] / igt,ih [tj=25 c] igt ih fig.5 : relative variation of gate trigger currentand holding current versus junction temperature (typi- cal value). 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 tamb( c) p(w) tcase ( c) a =180 125 85 95 105 115 rth=0 c/w rth=1 c/w rth=2 c/w rth=3 c/w fig.2 : correlation between maximum power dissi- pation and maximum allowable temperature (tamb and tcase) for different thermal resistances heatsink + contact. 1 10 100 1000 0 20 40 60 80 100 120 140 160 180 200 220 number of cycles itsm(a) tj initial=25 c f=50hz fig.6 : non repetitive surge peak on-state current versus number of cycles. 1e-3 1e-2 1e-1 1e+0 1e+1 0.01 0.10 1.00 tp(s) k=[zth(j-c)/rth(j-c)] fig.4 : relative variation of thermal impedance versus pulse duration. BTA25BW / bta25cw 3/5
12 510 100 200 500 1000 tp(ms) itsm(a),i t(a s) tj initial=25 c itsm i t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp < 10ms, and corresponding value of i 2 t. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 10 100 300 vtm(v) itm(a) tj=25 c tj max.: vto=0.88v rd=16m w tj=tj max. fig.8 : on-state characteristics(maximum values). BTA25BW / bta25cw 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com package mechanical data rd91 (plastic) a2 l2 l1 b2 c c2 a1 c1 b1 n1 b f i a e3 n2 ref. dimensions millimeters inches min. max. min. max. a 40.00 1.575 a1 29.90 30.30 1.177 1.193 a2 22.00 0.867 b 27.00 1.063 b1 13.50 16.50 0.531 0.650 b2 24.00 0.945 c 14.00 0.551 c1 3.50 0.138 c2 1.95 3.00 0.077 0.118 e3 0.70 0.90 0.027 0.035 f 4.00 4.50 0.157 0.177 i 11.20 13.60 0.441 0.535 l1 3.10 3.50 0.122 0.138 l2 1.70 1.90 0.067 0.075 n1 33 43 33 43 n2 28 38 28 38 marking : type number weight : 20 g BTA25BW / bta25cw 5/5
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